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Freescale Semiconductor Technical Data
Document Number: MRFE6P9220H Rev. 0, 1/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 Volt base station equipment. * Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1600 mA, Pout = 47 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20 dB Drain Efficiency -- 30% ACPR @ 750 kHz Offset -- - 46 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 350 Watts CW Output Power (2 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness * Typical Pout @ 1 dB Compression Point ] 220 Watts CW Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Device Designed for Push - Pull Operation Only * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6P9220HR3
865 - 900 MHz, 47 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFET
CASE 375G - 04, STYLE 1 NI - 860C3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +66 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 220 W CW Case Temperature 76C, 47 W CW Symbol RJC Value (2,3) 0.25 0.28 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MRFE6P9220HR3 1
Freescale Semiconductor RF Product Device Data
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3B (Minimum) C (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (4) (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (4) (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (1) (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 240 Adc) Gate Quiescent Voltage (3) (VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test) Drain - Source On - Voltage (1) (VGS = 10 Vdc, ID = 2.4 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (4) (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (4) (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 1.22 217 1060 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.5 2.3 0.1 2.2 3 0.22 3 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 47 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. 2. 3. 4. Each side of the device measured separately. Part internally matched both on input and output. Measurement made with device in push - pull configuration. Drains are tied together internally as this is a total device value. (continued) Gps D ACPR IRL 18.5 28 -- -- 20 30 - 46 - 14 23 -- - 44.5 -9 dB % dBc dB
MRFE6P9220HR3 2 Freescale Semiconductor RF Product Device Data
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 220 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 47 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 220 W CW Average Group Delay @ Pout = 220 W CW, f = 880 MHz Part - to - Part Insertion Phase Variation @ Pout = 220 W CW, f = 880 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 220 10 Max -- -- Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 850 - 910 MHz Bandwidth
VBWres GF Delay G P1dB
-- -- -- -- -- -- --
35 1.1 3.1 4.6 11 0.012 0.005
-- -- -- -- -- -- --
MHz dB ns dB/C dBm/C
MRFE6P9220HR3 Freescale Semiconductor RF Product Device Data 3
R1 VBIAS B1 + R3 COAX1 C1 C2 C3 Z19 Z8 Z10 Z12 Z14 Z16 C14 C10 Z3 C5 R2 COAX2 VBIAS + C9 C7 C8 C24 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 0.401 x 0.081 0.563 x 0.101 0.416 x 0.727 1.186 x 0.058 0.191 x 0.507 1.306 x 0.150 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z12, Z13 Z14, Z15 Z16, Z17 Z18 Z19, Z20 PCB + C19 C20 + C22 C21 B2 Z7 Z20 C6 Z5 DUT C11 C12 RF Z18 OUTPUT C23 + C15 C16 + C18 C17 VSUPPLY
COAX3
Z6 Z2 RF INPUT Z1 C4 Z4
Z9
Z13
Z15
Z17 C13
Z11
COAX4 VSUPPLY
0.225 x 0.507 Microstrip 0.440 x 0.435 Microstrip 0.123 x 0.215 Microstrip 0.401 x 0.081 Microstrip 0.339 x 0.165 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF6P9220HR3 Test Circuit Schematic
Table 5. MRF6P9220HR3 Test Circuit Component Designations and Values
Part B1, B2 C1, C9 C2, C7, C17, C21 C3, C8, C16, C20 C4, C5, C13, C14 C6, C12 C10 C11 C15, C19 C18, C22 C23, C24 Coax1, 2, 3, 4 R1, R2 R3 Description Ferrite Beads, Short 1.0 F, 50 V Tantalum Chip Capacitors 0.1 F Chip Capacitors 1000 pF Chip Capacitors 100 pF Chip Capacitors 8.2 pF Chip Capacitors 9.1 pF Chip Capacitor 1.8 pF Chip Capacitor 47 F, 50 V Electrolytic Capacitors 470 F, 63 V Electrolytic Capacitors 22 pF Chip Capacitors 50 , Semi Rigid Coax, 2.40 Long 10 , 1/4 W Chip Resistors 1.0 k, 1/4 W Chip Resistor Part Number 2743019447 T491C105K050AT CDR33BX104AKWT ATC100B102JT50XT ATC100B101JT500XT ATC100B8R2BT500XT ATC100B9R1BT500XT ATC100B1R8BT500XT EMVY500ADA470MF80G EMVY630GTR471MLN0S ATC100B220FT500XT UT - 141A - TP CRCW120610R0FKEA CRCW12061001FKEA Manufacturer Fair - Rite Kemet Kemet ATC ATC ATC ATC ATC Nippon Chemi - Con Nippon Chemi - Con ATC Micro - Coax Vishay Vishay
MRFE6P9220HR3 4 Freescale Semiconductor RF Product Device Data
C1 B1 C3
C15
C18 VDD C16 C17
VGG R3
C2
R1
C23
COAX1
COAX3
MRF6P9220, Rev. 1
C4 CUT OUT AREA C11 C10 C12
C14
C6 C5
C13
COAX2
COAX4
C20 VGG C7 C8 B2 C24 VDD
C21
C9
R2
C19
C22
Figure 2. MRF6P9220HR3 Test Circuit Component Layout
MRFE6P9220HR3 Freescale Semiconductor RF Product Device Data 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 20.7 20.4 20.1 Gps, POWER GAIN (dB) 19.8 19.5 19.2 18.9 18.6 18.3 18 17.7 850 ALT1 IRL Gps VDD = 28 Vdc, Pout = 47 W (Avg.) IDQ = 1600 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ACPR D 31 30 29 28 27 -40 -45 -50 -55 -60 860 870 880 890 900 -65 910
ACPR (dBc), ALT1 (dBc)
-7 -9 -11 -13 -15 -17
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 47 Watts Avg.
21.5 21 20.5 Gps, POWER GAIN (dB) 20 19.5 19 18.5 18 800 mA 17.5 17 16.5 1 10 Pout, OUTPUT POWER (WATTS) CW 100 300 VDD = 28 Vdc f = 880 MHz 2000 mA 1600 mA 1200 mA IDQ = 2400 mA -10 -20 IM3-U -30 -40 -50 -60 -70 0.1 1 10 100 TWO-TONE SPACING (MHz) VDD = 28 Vdc, Pout = 220 W (PEP) IDQ = 1600 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz IM7-L IM5-U IM5-L IM7-U
IMD, INTERMODULATION DISTORTION (dBc)
IM3-L
Figure 4. CW Power Gain versus Output Power
Figure 5. Intermodulation Distortion Products versus Tone Spacing
-5 ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
60 50 40 30 Gps 20 25_C 10 0 1 10 Pout, OUTPUT POWER (WATTS) CW 100 85_C ACPR TC = -30_C VDD = 28 Vdc, IDQ = 1600 mA f = 880 MHz, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) -30_C
-15 25_C 85_C 85_C D -30_C -35 -45 -55 -65 300 -25
Figure 6. Single - Carrier N - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power
MRFE6P9220HR3 6 Freescale Semiconductor RF Product Device Data
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
24 -30_C Gps TC = -30_C 25_C 85_C 75
20
45 85_C D
18
25_C
30 VDD = 28 Vdc IDQ = 1600 mA f = 880 MHz 100
16
15
14 1 10 Pout, OUTPUT POWER (WATTS) CW
0 500
Figure 7. Power Gain and Drain Efficiency versus CW Output Power
20.5 19.5 Gps, POWER GAIN (dB) 18.5 17.5 16.5 15.5 14.5 0 50 100 150 200 250 300 350 400 Pout, OUTPUT POWER (WATTS) CW VDD = 24 V 28 V 32 V IDQ = 1600 mA f = 880 MHz
Figure 8. Power Gain versus Output Power
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 47 W Avg., and D = 30%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 9. MTTF Factor versus Junction Temperature MRFE6P9220HR3 Freescale Semiconductor RF Product Device Data 7
D, DRAIN EFFICIENCY (%)
22 Gps, POWER GAIN (dB)
60
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -3.6 -2.9 -2.2 -1.5 -0.7 0 0.7 1.5 2.2 2.9 3.6 1.2288 MHz Channel BW . ... ..... . .. .............................. ............ ............. . . .. . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . . . ............ ........... ...... .... ........ ..... ... . ....... ....... .. ... ....... . .... .... .. . . .. ......... ......... ... . ..... ...... ....... .. ..... . ..... ... ... . .... .... . ..... .... . ..... . .... ......... . .. .. . ...... .... ....... .. ........ -ACPR in 30 kHz +ACPR in 30 kHz .............. . . .. . . ... .... .......... ..... . ............... . ......... .... ........... Integrated BW Integrated BW .. ...... ............ . . ...... ... . .. .. ...... ....... ...
Figure 10. Single - Carrier CCDF N - CDMA
f, FREQUENCY (MHz)
Figure 11. Single - Carrier N - CDMA Spectrum
MRFE6P9220HR3 8 Freescale Semiconductor RF Product Device Data
f = 850 MHz Zload Zo = 10
f = 910 MHz
f = 910 MHz
f = 850 MHz
Zsource
VDD = 28 Vdc, IDQ = 1600 mA, Pout = 47 W Avg. f MHz 850 865 880 895 910 Zsource 3.50 - j7.10 3.59 - j7.07 3.03 - j6.98 2.42 - j6.20 2.26 - j5.39 Zload 6.04 - j0.49 6.83 - j1.14 7.41 - j1.19 7.60 - j0.98 8.06 - j0.45
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
- Z source Z
+ load
Figure 12. Series Equivalent Source and Load Impedance
MRFE6P9220HR3 Freescale Semiconductor RF Product Device Data 9
PACKAGE DIMENSIONS
G L ccc R
M
4
2X
TA
M
B
M
J
1 2
Q bbb
M
TA
M
B
M
(LID) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF
B
5 4X
(FLANGE)
K
4X
3
4
S
(INSULATOR) M
D bbb
M
B TA
M
bbb
TA
M
B
M
B
M
ccc
M
TA
(LID)
M
B
M
N
F
E
H bbb A
(INSULATOR) M
M
C B
M
T
TA A
M
SEATING PLANE
STYLE 1: PIN 1. 2. 3. 4. 5.
CASE 375G - 04 ISSUE G NI - 860C3
MRFE6P9220HR3 10 Freescale Semiconductor RF Product Device Data
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Jan. 2009 * Initial Release of Data Sheet Description
MRFE6P9220HR3 Freescale Semiconductor RF Product Device Data 11
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MRFE6P9220HR3
Rev. 12 0, 1/2009 Document Number: MRFE6P9220H
Freescale Semiconductor RF Product Device Data

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